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hexfet ? power mosfet 12/06/10 pd-96341 gds gate drain source automotive mosfet specifically designed for automotive applications, this cellular planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description features advanced planar technology low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * www.irf.com 1 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specificatio ns is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g v (br)dss -55v r ds(on) max. 0.065 ? i d -31a hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ d-pak auirfr5305 d d i-pak AUIRFU5305 auirfr5305 AUIRFU5305 s d g s d g absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ -10v i d @ t c = 100c continuous drain current, v gs @ -10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient (pcb mount) ?? ??? 50 c/w r ja junction-to-ambient *** ??? 110 -55 to + 175 300 (1.6mm from case ) 110 0.71 20 max. -31 -22 -110 -5.0 11 280 -16 free datasheet http://
auirfr/u5305 2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd -16a, di/dt -280a/ s, v dd v (br)dss , t j 175 c v dd = -25v, starting t j = 25 c, l = 2.1mh r g = 25 ? i as = -16a. (see figure 12) pulse width 300 s; duty cycle 2%. s d g s d g this is applied for i-pak, l s of d-pak is measured between lead and center of die contact. uses irf5305 data and test conditions. * *when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. *** uses typical socket mount. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.034 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.065 ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v gfs forward transconductance 8.0 ??? ??? s i dss drain-to-source leakage current ??? ??? -25 ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 63 q gs gate-to-source charge ??? ??? 13 q gd gate-to-drain ("miller") charge ??? ??? 29 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 66 ??? t d(off) turn-off delay time ??? 39 ??? t f fall time ??? 63 ??? l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from package and center of die contact c iss input capacitance ??? 1200 ??? c oss output capacitance ??? 520 ??? c rss reverse transfer capacitance ??? 250 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.3 v t r r reverse recovery time ??? 71 110 ns q r r reverse recovery charge ??? 170 250 nc v gs = -20v v gs = 20v v ds = -44v v ds = -25v, i d = -16a i d = -16a conditions conditions r d = 1.6 ? see fig.10 v gs = 0v v ds = -25v ? = 1.0mhz,see fig.5 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = -16a, v gs = 0v t j = 25c, i f = -16a di/dt = 100a/s conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -16a v ds = v gs , i d = -250a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 150c v gs = -10v see fig.6 and 13 v dd = -28v i d = -16a r g = 6.8 ? ??? ??? ??? ??? a -31 -110 pf ??? ??? a na ns nc nh ??? ??? 4.5 7.5 free datasheet http://
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qualification information ? d pak msl1 i-pak n/a rohs compliant yes esd machine model class m2 (200v) ( per aec-q101-002) human body model class h1b (1000v) (per aec-q101-001) charged device model class c5 (1125v) (per aec-q101-005) moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. free datasheet http://
auirfr/u5305 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1000 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j t = 175c j a v = -25v 20s pulse width ds gs -v , gate-to-source voltage (v) d -i , drain-to-source current (a) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -27a v = -10v d gs free datasheet http://
auirfr/u5305 www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss ds -v , drain-to-source voltage (v) 0 4 8 12 16 20 0 102030405060 q , total gate charge (nc) g a for test circuit see figure 13 v = -44v v = -28v i = -16a gs -v , gate-to-source voltage (v) d ds ds 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) 100s 1ms 10ms a t = 25c t = 175c single pulse c j ds -v , drain-to-source voltage (v) d -i , drain current (a) free datasheet http://
auirfr/u5305 6 www.irf.com fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - free datasheet http://
auirfr/u5305 www.irf.com 7 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = -25v i top -6.6a -11a bottom -16a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a -20v 15v q g q gs q gd v g charge -10v free datasheet http://
auirfr/u5305 8 www.irf.com peak diode recovery dv/dt test circuit fig 14. for p-channel hexfets + - + + + - - - v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity for p-channel ** use p-channel driver for p-channel measurements $ v gs * $$ p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period %& *** v gs = 5.0v for logic level and 3v drive devices free datasheet http://
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# $ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch free datasheet http://
auirfr/u5305 12 www.irf.com ordering information base part package type complete part number form quantity auirfr5305 dpak tube 75 auirfr5305 tape and reel 2000 auirfr5305tr tape and reel left 3000 auirf5305trl tape and reel right 3000 auirf5305trr AUIRFU5305 ipak tube 75 AUIRFU5305 standard pack free datasheet http://
auirfr/u5305 www.irf.com 13
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are so ld subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of thi rd parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business p ractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir produc t could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim al leges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 free datasheet http://

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